symbol v ds v gs i dm i ar e ar t j , t stg symbol typ ma x 55 62.5 90 110 r jl 40 48 maximum junction-to-lead c steady-state c/w parameter units maximum junction-to-ambient a f t 10s r ja c/w maximum junction-to-ambient a steady-state c/w junction and storage temperature range -55 to 150 c thermal characteristics t a =70c 1.2 w power dissipation t a =25c p d 1.9 a t a =70c 5.8 pulsed drain current b 40 continuous drain current af t a =25c i d 6.9 drain-source voltage 30 v gate-source voltage 12 v absolute maximum ratings t a =25c unless otherwise noted parameter maximum units avalanche current b 12 a repetitive avalanche energy 0.3mh b 22 mj AO4800B, AO4800Bl dual n-channel enhancement mode field effect transistor features v ds (v) = 30v i d = 6.9a (v gs = 10v) r ds(on) < 27m ? (v gs = 10v) r ds(on) < 32m ? (v gs = 4.5v) r ds(on) < 50m ? (v gs = 2.5v) uis tested! rg,ciss,coss,crss tested! general description the AO4800B/l uses advanced trench technology to provide excellent r ds(on) and low gate charge. the two mosfets make a compact and efficient switch and synchronous rectifier combination for use in buck converters. standard product AO4800B/l is pb-free (meets rohs & sony 259 specifications). g1 s1 g2 s2 d1 d1 d2 d2 1 2 3 4 8 7 6 5 g1 d1 s1 g2 d2 s2 soic-8 alpha & omega semiconductor, ltd. www.aosmd.com
AO4800B/l symbol min typ max units bv dss 30 v 0.002 1 t j =55c 5 i gss 100 na v gs(th) 0.7 1 1.5 v i d(on) 40 a 20 27 t j =125c 25 40 23 32 m ? 34 50 m ? g fs 10 26 s v sd 0.71 1 v i s 4.5 a c iss 900 1100 pf c oss 88 pf c rss 65 pf r g 0.95 1.5 ? q g 10 12 nc q gs 1.8 nc q gd 3.75 nc t d(on) 3.2 ns t r 3.5 ns t d(off) 21.5 ns t f 2.7 ns t rr 16.8 20 ns q rr 812nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =5a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =2.5v, i d =5a v gs =4.5v, v ds =5v v gs =10v, i d =6.9a reverse transfer capacitance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =250 a v ds =24v, v gs =0v v ds =0v, v gs = 12v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i f =5a, di/dt=100a/ s v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge v gs =4.5v, v ds =15v, i d =8.5a gate source charge gate drain charge turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.8 ? , r gen =6 ? turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters gate resistance v gs =0v, v ds =0v, f=1mhz m ? v gs =4.5v, i d =6a i s =1a,v gs =0v v ds =5v, i d =5a a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 1 : dec 2007 alpha & omega semiconductor, ltd. www.aosmd.com
AO4800B/l typical electrical and thermal characteristics this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arisin g out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 10 20 30 40 50 60 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =2v 2.5v 3v 4.5v 10v 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 v gs (volts) figure 2: transfer characteristics i d (a) 10 20 30 40 50 60 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.5 0.7 0.9 1.1 1.3 1.5 1.7 -50 -25 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =2.5v v gs =10v v gs =4.5v v gs =4.5 v gs =10v v gs =2.5v 10 20 30 40 50 60 70 80 90 100 0246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =2.5v v gs =4.5v v gs =10v i d =6.9a 25c 125c alpha & omega semiconductor, ltd. www.aosmd.com
AO4800B/l typical electrical and thermal characteristics this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arisin g out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 1 2 3 4 5 024681012 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 50 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 10 s 1 0 m s 1ms 1 s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =6.9a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c alpha & omega semiconductor, ltd. www.aosmd.com
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